Device for heat treatment of objects and a method for producing a susceptor
US5879462A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 16, 1995 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Oct 16, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/38
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is directed to a device for heat treatment of objects. It comprises a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition. The susceptor includes an inner wall and an outer, circumferential wall enclosing the inner wall at a distance therefrom. The inner wall defines a chamber for receiving the object. An enclosed space is formed between the inner and outer wall, and is filled with a powder. The powder is made of SiC, a group III nitride or alloys thereof. Also, for heating the susceptor and thereby also the object, a Rf-field radiator is provided surrounding the susceptor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.