Lateral resonant tunneling transistor having two non-symmetric quantum dots
US5880484A · kind A · utility
5Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1996 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Sep 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A lateral resonant tunneling transistor having two non-symmetric quantum dots is disclosed. When a negative voltage is supplied to each plurality of thin split gates, two non-symmetric quantum dots are formed owing to the formation of the potential barrier. Thus when a forward bias voltage is applied, the resonant tunneling phenomena occur twice successively. Through these two successive resonant tunneling phenomena and by lowering the height of the third potential barrier 6a, the resonant tunneling current can be maximized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.