Semiconductor device having a nitrogen doped polysilicon layer
US5880498A · kind A · utility
11Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1997 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Jul 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
Abstract
A semiconductor device comprising, a semiconductor substrate, a first gate insulator film formed on the semiconductor substrate, a floating gate formed on the first gate insulator film, a second insulator film formed on the floating gate, a control gate formed on the second insulator film, and a silicon film doped with nitrogen and an impurity, and interposed between the floating gate and the second gate insulator film and/or between the second gate insulator film and the control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.