Semiconductor device including a two-layer protective insulating layer
US5880518A · kind A · utility
5Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1997 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Mar 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.