Magnetoresistive effect element
US5880911A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1997 |
| Grant date | Mar 9, 1999 |
| Priority date | — |
| Expiry date | Jun 25, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The magnetoresistive effect element in accordance with the invention has several aspects. For instance, the magnetoresistive effect element includes an artificial lattice multilayered structure composed of a thin magnetic layer and a non-magnetic layer at least once successively deposited, and a bias field applying device for applying a bias magnetic field to the artificial lattice multilayered structure so that an orientation of residual magnetization of one of the thin magnetic layers having a greater coercive force than that of an adjacent thin magnetic layer, is the same as an orientation of a bias magnetic field to be applied to the artificial lattice multilayered structure. The magnetoresistive effect element provides enhanced regenerated outputs and also improves the symmetry of regenerated waveforms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.