Heat treated and sintered sputtering target
US5882493A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Oct 8, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2007/24316
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A sputtering target, for forming a recording layer of an optical recording medium in which information is written and erased through a transition between two phases by utilizing electromagnetic wave energy, consists of a heat-treated and sintered composition represented by the formula: EQU Ag.sub..alpha. In.sub..beta. Te.sub..gamma. Sb.sub..delta. EQU wherein EQU 2.ltoreq..alpha..ltoreq.30 EQU 3.ltoreq..beta..ltoreq.30 EQU 10.ltoreq..gamma..ltoreq.50 EQU 15.ltoreq..delta..ltoreq.83 EQU .alpha.+.beta.+.gamma.+.delta.=100 A method of producing the sputtering target, an optical recording medium having a recording layer formed through sputtering by use of the sputtering target, and a method of forming the recording layer are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.