Method of etching a trench into a semiconductor substrate
US5883012A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1995 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Dec 21, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Trench structures (12,32,35,46) are formed in single crystal silicon substrates (10,30) that have either a (110) or (112) orientation. A selective wet etch solution is used that removes only the exposed portions of the single crystal silicon substrates (10,30) that are in the (110) or (112) crystal planes. The trench structures (12,32,35,46) are defined by the {111} crystal planes in the single crystal silicon substrate (10,30) that are exposed during the selective wet etch process. Trench structures (32,35) can be formed on both sides of a single crystal silicon substrate (30) to form an opening (34). Opening (34) can be used as an alignment mark to align front side processing to backside and vice versa. Trench structures can also be use to form a microstructure (41,61) for a sensor (40,60).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.