Integrated circuit device and process for its manufacture
US5883219A · kind A · utility
40Cited by
25References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | May 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a porous dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.