Photodetector based on buried junctions and a corresponding method of manufacture
US5883421A · kind A · utility
30Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Mar 13, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1825
Abstract
A photodetector based on buried junctions includes a semiconductor structure with two successive p-n junctions, buried at increasing depths, assembled in pairs in opposition, and defining at least three layers. One of the layers is adjacent to a photosensitive portion of the surface of the photodetector. A reverse bias is applied to the junctions, and the values of at least two internal currents passing through such junctions is detected. The internal currents are generated by received light, with each of the junctions corresponding to a particular wavelength of the received light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.