Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
US5883564A · kind A · utility
86Cited by
23References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 11, 1996 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Sep 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetic field sensor is described that has a 0.25-0.6 micrometer thick magnetically active layer of very high electron mobility that consists essentially of epitaxial indium antimonide. The indium antimonide layer is disposed on a 0.03-1.0 micrometer thick buffer layer of In.sub.1-x Al.sub.x Sb, where "x" is about 0.01-0.2, that is substantially lattice-matched to the indium antimonide active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.