Method for altering cable semiconductive layer
US5885651A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1998 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Mar 24, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49123
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of altering a portion of the semiconductive layer of an electric power cable, to increase its resistance so as to render it electrically insulative. The semiconductive layer is loaded with carbon powder which forms chains to provide conductive pathways through the layer. By introducing an intercalant into the semiconductive layer, which causes the layer to swell, the conductive pathways are interrupted and the material is rendered insulative (>10.sup.4 .OMEGA.-cm). The intercalant may be a polymerizable material with a curing agent which is cured in situ, i.e., without removing the semiconductive layer from the cable. By this method, flashover to the semiconductive layer at a cable splice or termination may be prevented without requiring tedious removal of the exposed portion of the semiconductive layer. The method is usable with both strippable and coextruded semiconductive layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.