Process for making contact to differently doped regions in a semiconductor device, and semiconductor device
US5885897A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 10, 1997 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Jan 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is disclosed for making contact to differently doped regions in a semiconductor device which are disposed in a silicon substrate in different depths, a first region with a first dopant concentration and/or conductivity type and the smaller depth being disposed in a second region with a second dopant concentration and/or conductivity type and the greater depth, and a first metal layer being deposited on the first region. A second metal layer is deposited on a portion of the first metal layer, and the structure is subjected to a heat treatment in which contact is made to the first region through the first metal layer and to the second region through the first metal layer and the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.