Dielectric material having a low dielectric loss factor for high-frequency use
US5885916A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1997 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Sep 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2223/40
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A dielectric material having a low dielectric loss factor for high-frequency use, which comprises a sintered product of silicon nitride chiefly composed of silicon nitride and containing at least oxygen as an impurity component or oxygen as an impurity component and a compound of an element of the Group 3a of periodic table, wherein said sintered product contains aluminum in an amount which is not larger than 2% by weight reckoned as an oxide thereof having relative densities of not smaller than 97% and has a dielectric loss factor at 10 GHz ofnot larger than 5.times.10.sup.-4. The dielectric material has excellent mechanical properties such as large strength and excellent chemical stability, features small dielectric loss factor in high-frequency regions, and is suited for use as a material for high-frequency oscillators, antennas, filters and electronic circuit boards. In particular, those dielectric materials are suited for use as window materials for introducing high frequencies in a high-frequency plasma-generating CVD apparatus, a microwave wave output unit and an oscillator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.