Process for forming a-axis-on-c-axis double-layer oxide superconductor films
US5885939A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 23, 1997 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Jun 23, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/742
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.