Single polysilicon layer flash E.sup.2 PROM cell
US5886378A · kind A · utility
9Cited by
3References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 10, 1994 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Jan 10, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
Abstract
A flash E.sup.2 PROM cell includes a single polysilicon layer part of which makes up the floating gate of a transistor of the cell, part of which makes up an electrode of a capacitor coupled to the floating gate, and part of which makes up the gate of a second transistor of the cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.