Semiconductor device having bipolar transistor with unique ratio of base gummel number to impurity concentration of collector region
US5886395A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1997 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Oct 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
To obtain both the highest possible maximum operating frequency f.sub.max and early voltage V.sub.A, a semiconductor device provided with a bipolar transistor including a collector region, a base region formed on the collector region, an emitter region formed in contact with the base region, a base leading electrode connected to the base region, and an emitter electrode connected to the emitter region, is characterized in that a ratio Q.sub.B /N.sub.c of base Gunmel number Q.sub.B to impurity concentration N.sub.C of the collector region of the bipolar transistor lies within a range from 0.2.times.10.sup.-3 cm to 2.5.times..sup.-3 cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.