Wafer support member
US5886863A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1996 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Jul 25, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A wafer support member comprises a base made of ceramics with thickness of 3 mm or more, a metallic electrode plate with thickness of 0.5 mm or more bonded onto the base, and an attraction surface composed of an aluminum nitride film with thickness of 0.01 to 0.5 mm coated on the surface of the electrode plate. The electrode plate functions as a plasma generating electrode when high frequency voltage is applied to the electrode plate and as an electrostatic attraction electrode when direct-current high voltage is applied to the electrode plate. Also, a wafer holding device for holding a wafer such as semiconductor wafer and glass substrate for liquid crystal is disclosed. The wafer holding device comprises a base body of aluminum nitride sintered body containing resistance heating elements therein. Lead terminals for feeding power to the resistance heating elements are formed in the lower surface of the base body. In one feature, at least the lead terminals and junction thereof are coated with a ceramic film composed of any one of silicon carbide, silicon nitride, sialon, and aluminum nitride. In another feature, the base body has a flat surface for forming an attraction surface, a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.