Semiconductor laser array
US5887012A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 9, 1996 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Dec 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4018
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser array according to the invention is so constructed that plural LDs are driven by the same modulating signal, and series connection of the plural LDs becomes possible. Accordingly, efficiency of modulation of the aforementioned semiconductor laser array is largely improved. After a n-InP clad layer 6, an active layer 7 and a p-InP layer 8 are successively grown on a semi-insulating substrate 5, the n-InP clad layer 6 is etched and a stripe shaped mesa is formed. Then, a p-InP current blocking layer 9 and a n-InP current blocking layer 10 are grown on the etched portion. After fabricating a p+-InP cap layer 11 thereon, the surface of the n-InP clad layer 6 is exposed by selective etching. Moreover, a channel 12 for isolating the adjacent LDs, reaching the semi-insulating layer 5, is formed by penetrating the n-InP clad layer 6. Each of the LDs is provided with a p-side electrode 13 and a n-side electrode 14 thereon, and a p-side electrode 13 of any LD is connected to the n-side electrode of an adjacent LD by a bonding wire 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.