Gas inlet apparatus and method for chemical vapor deposition reactors
US5888303A · kind A · utility
13Cited by
16References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 7, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Apr 7, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45576
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas inlet apparatus and method for introducing gas streams into the process chamber of a chemical vapor deposition reactor. The inlet includes conduits that are coaxially arranged and spaced radially apart, with the passageways formed therebetween carrying the gas streams. A conical surface is provided at the stream-exiting end of the inlet so that gases impinge upon it and are then dispersed within the reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.