Surface acoustic wave device
US5888646A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 19, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Feb 19, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device comprises a diamond layer (12) or a substrate (11) with a diamond layer (12) formed thereon, an Al electrode (13) formed on the diamond layer (12), and a ZnO piezoelectric thin film layer (14) formed on the diamond layer (12) with the Al electrode (13) covered by the ZnO piezoelectric thin film layer (14). The ZnO piezoelectric thin film layer (14) has a thickness h1 within a range defined by 0.65.ltoreq.kh1.ltoreq.0.75 while the Al electrode (13) has a thickness h2 within a range defined by 0.03.ltoreq.kh2.ltoreq.0.04, where k is given by k=2 .pi./.lambda. and .lambda. represents an electrode period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.