Method of manufacturing active matrix display
US5888855A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1995 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Dec 14, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention has a semiconductor device including a substrate made of an insulating material, a gate electrode formed on the substrate, a thin film made of a silicon semiconductor and formed on the gate electrode through a gate insulating film, a protective film formed on the thin film and having two opposing major surfaces, and a source electrode and a drain electrode formed to be electrically connected with the thin film, wherein the first major surface of the two major surfaces of the protective film is in contact with the thin film, and a region near the second major surface of the protective film contains oxygen. The present invention has a method of manufacturing a semiconductor device, in which a gate electrode is on a substrate made of an insulating material, a thin film made of a silicon semiconductor is formed on the gate electrode through a gate insulating film, a protective film having two opposing major surfaces in which a first major surface is in contact with the thin film and a region near a second major surface contains oxygen is formed on the thin film, and a source electrode and a drain electrode are formed to electrically connect with the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.