Method of fabricating semiconductor device
US5888859A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1996 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Nov 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device includes forming a recess in a compound semiconductor substrate using a patterned insulating film on a surface of the substrate, implanting dopant ions at the bottom of the recess to form a channel region, and depositing a refractory metal film. The refractory metal film is etched, using a resist pattern, to form a gate electrode and additional dopant ions are implanted to form relatively highly doped regions intersecting the channel region. Very highly doped regions are formed my implantation, after removing the insulating film, using the gate electrode and remainder of the resist mask as an implantation mask. After stripping the resist, annealing to activate the implanted ions, and depositing a passivating film on the substrate and gate electrode, source and drain electrodes are formed. The field effect transistor thus produced has a high breakdown voltage, improved reliability, a highly controlled pinch-off voltage, and improved transconductance and operating speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.