Method of fabricating a flash memory device
US5888869A · kind A · utility
28Cited by
8References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Jun 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
The present invention discloses a method of fabricating a flash memory device. In the present invention, since the dielectric film formed in the memory cell region is only exposed to the cleaning solution which is used in cleaning process preformed after removing the dielectric film formed in the low voltage transistor region, the number of damages applied to the dielectric film can be minimized, therefore, a good dielectric film can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.