Semiconductor integrated circuit
US5889291A · kind A · utility
209Cited by
20References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1996 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Jul 31, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel TFTs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.