Electrostatic discharge protection circuit
US5889309A · kind A · utility
20Cited by
13References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1996 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Dec 19, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/615
Abstract
An electrostatic discharge protection circuit formed in a semiconductor substrate includes a vertical bipolar junction transistor having a base which is grounded, an emitter connected to an output/input bonding pad of an integrated circuit, and a collector connected to a high power source via a resistor. The resistor is a parasitic resistor created by controlling the distance between the diffusion regions or the distance between a p-type well region and an n-type well region or formed by a lightly doped diffusion region in the semiconductor substrate to prevent current crowding and increase electrostatic protection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.