Magnetoresistive element and sensor having optimal cross point
US5889640A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1996 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Sep 12, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element generally includes consecutively an antiferromagnetic layer, a first ferromagnetic layer, a non-mangetic layer, and a second ferromagnetic layer. Instead of the non-magnetic layer, the magnetoresistive element may include a combination of a Co layer, a non-magnetic layer, and a Co layer. The antiferromagnetic layer is made of nickel oxide, a mixture of nickel oxide and cobalt oxide, or a laminate of nickel oxide and cobalt oxide. The ferromagnetic layer has a thickness of 1 to 10 nm, and the element has a height of 0.1 to 1 um. The non-magnetic layer has a thickness of 2 to 3 nm, and the antiferromagnetic layer has a thickness of 5 to 30 nm. The magnetoresistive element has an appropriate cross point, outputs an excellent reproduced signal, and has a desirable half-width with respect to the output signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.