Circuit for the production of a programming high voltage
US5889720A · kind A · utility
6Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | May 6, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
To form a ramp signal for the programming of a memory cell without losing excess voltage in a control circuit, the output of a voltage pull-up circuit is connected to the programming input using a P type transistor. It is shown that this P type transistor then charges the memory array at constant current, prompting a linear increase of the voltage. This results in preventing the memory cell that is to be programmed from being subjected to excessively sudden variations of voltage. It is shown that by acting in this way, the integrated circuit can be made to work even with very low voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.