Multilayer thin-film for magnetoresistive device
US5891586A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1996 |
| Grant date | Apr 6, 1999 |
| Priority date | — |
| Expiry date | Jan 16, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12944
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A multilayer thin-film structure comprises at least one layered structure formed by depositing a nonmagnetic layer, a first ferromagnetic layer of a ferromagnetic metal or alloy having a positive saturation magnetostriction constant, a nonmagnetic layer and a ferromagnetic layer of a ferromagnetic metal or alloy having a negative saturation magnetostriction constant in that order, and a uniaxial stress is induced in the multilayer thin-film structure. The multilayer thin-film structure for magnetoresistive devices, comprises the magnetic layers which could not have been used for forming the prior art structures and having similar compositions which could not have been used for forming the prior art structure, has an MR ratio in the range of 10 to 20%, does not need the use of antiferromagnetic materials unsatisfactory in corrosion resistance and environment resistance, does not require the turning of a magnetic field when forming the thin films and does not require expensive manufacturing systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.