Method of forming a semiconductor device by using a conductive film as an etching stopper
US5891762A · kind A · utility
17Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1996 |
| Grant date | Apr 6, 1999 |
| Priority date | — |
| Expiry date | Jul 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/01
Abstract
A manufacturing method for a semiconductor device, whereby poly-silicon serving as an etching stopper is formed above a redundant fuse at the same time as a cell plate is. A silicon nitride film, an oxide film, and another oxide film on the redundant fuse are consecutively etched using the poly-silicon as the etching stopper. Then the poly-silicon is etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.