Method and circuitry for storing discrete amounts of charge in a single memory element
US5892710A · kind A · utility
117Cited by
50References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1997 |
| Grant date | Apr 6, 1999 |
| Priority date | — |
| Expiry date | Aug 13, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and circuitry for programming a memory cell to one of at least three amounts of charge. The amount of charge placed in the memory cell is increased by increasing the voltage level of a programming pulse applied to the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.