Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
US5893730A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1997 |
| Grant date | Apr 13, 1999 |
| Priority date | — |
| Expiry date | Feb 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.