Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing
US5893756A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1997 |
| Grant date | Apr 13, 1999 |
| Priority date | — |
| Expiry date | Aug 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A post metal chemical-mechanical polishing cleaning process that effectively inhibits corrosion of a metallic plug is described. The process includes providing a partially fabricated integrated circuit (IC) substrate having a metallic plug that is formed by subjecting a metallic surface on the integrated circuit (IC) substrate to chemical-mechanical polishing, which produces a contaminated dielectric layer containing metallic contaminants. The process also includes scrubbing the IC substrate surface in the presence of a mixture including ethylene glycol and hydrofluoric acid to remove at least a portion of the contaminated dielectric layer and to effectively inhibit corrosion of the metallic plug. The mixture has ethylene glycol in an amount that is between about 2 times and about 7 times the amount of hydrofluoric acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.