Direct deposition of palladium
US5894038A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1997 |
| Grant date | Apr 13, 1999 |
| Priority date | — |
| Expiry date | Feb 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/105
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a process for forming a layer of palladium on a substrate, comprising: PA1 preparing a solution of a palladium precursor, wherein the palladium precursor consists of EQU Pd(OOCR.sup.1).sub.m (OOCR.sup.2).sub.n wherein PA1 R.sup.1 is hydrogen, alkyl, alkenyl, alkynyl, --R.sup.3 COOH, alkyl from 1 to 5 carbons substituted with one or two hydroxyl groups, PA1 R.sup.2 is hydrogen, alkyl, alkenyl, alkynyl, --R.sup.3 COOH, alkyl from 1 to 5 carbon atoms substituted with one or two hydroxyl groups, --CHO, PA1 R.sup.3 is alkyl, and alkyl groups from 1 to 5 carbon atoms substituted with one or two hydroxyl groups PA1 m and n are real numbers or fractions, and m+n=2; PA1 applying the palladium precursor to the surface of the substrate; PA1 decomposing the palladium precursor by subjecting the precursor to heat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.