Semiconductor device structure for insulated gate bipolar transistor
US5894139A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1997 |
| Grant date | Apr 13, 1999 |
| Priority date | — |
| Expiry date | May 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device is provided which includes a first-conductivity-type collector layer having a rear surface on which a collector electrode is formed, a second-conductivity-type buffer layer laminated on the collector layer, a second-conductivity-type conductivity modulation layer formed on the buffer layer, a first-conductivity-type emitter layer formed as a well in a surface of the conductivity modulation layer, a second-conductivity-type source region formed in a surface of a well edge portion of the emitter layer, a gate electrode formed through a gate insulating film to overlap the source region and the conductivity modulation layer, and an emitter electrode that is in ohmic contact with both the emitter layer and the source region. In the present device, the second-conductivity-type source region includes a second-conductivity-type source region formed in the well edge of the emitter layer, and a second-conductivity-type source contact region formed adjacent to the source region and held in ohmic contact with the emitter electrode. This source contact region has a higher impurity concentration than the source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.