Method for etching nitride
US5895223A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1997 |
| Grant date | Apr 20, 1999 |
| Priority date | — |
| Expiry date | Dec 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching nitride is provided, by which the etching rate and the roughness of the etching surface can be powerfully controlled, and by which the etching depth can be in-situ monitored. The etching method comprises the steps of: (i) coating a first electrode on a nitride chip; (ii) mounting the nitride chip on a holding device; (iii)dipping the holding device, the nitride chip and the first electrode in electrolysis liquid; (iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and (v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.