Method of manufacturing semiconductor device
US5895226A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1997 |
| Grant date | Apr 20, 1999 |
| Priority date | — |
| Expiry date | Nov 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Two kinds of metal patterns 12, 13 are formed on a semiconductor wafer 11 to deposit a surface protective film 14 on the entirety of the surface to implement patterning to the surface protective film 14 so that the surface of the metal pattern 12 at least on dicing lines of the metal patterns 12, 13 is exposed to deposit barrier metal 15 on the entirety of the surface to remove, by etching, at the same time, portions on the dicing lines of the barrier metal 15 and the metal pattern 12 on the dicing lines of the metal patterns 12, 13 to carry out dicing with respect to the semiconductor wafer 11 along the dicing lines from which the metal pattern 12 has been removed to thereby prevent that the end portion of the metal pattern turned up by dicing comes into contact with inner lead or bonding wire so that any failure takes place.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.