Low subthreshold leakage current HFET

US5895929A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Jonathan K. Abrokwah · Tempe, US
• Rodolfo Lucero · Scottsdale, US
• Bruce Bernhardt · Wauconda, US

Key dates

• Filing date: Jul 7, 1998
• Grant date: Apr 20, 1999
• Expiry date: Jul 7, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/801

Abstract

A low subthreshold leakage current, p-channel HFET including a GaAs supporting substrate with a first GaAs buffer layer and a first Al.sub.0.75 Ga.sub.0.25 As diffusion barrier layer formed thereon and a low temperature grown layer, including one of GaAs and AlGaAs, grown at 200.degree. C. on the first diffusion barrier layer. A second Al.sub.0.75 Ga.sub.0.25 As diffusion barrier layer is positioned on the low temperature grown layer and a second GaAs buffer layer is grown on the second diffusion barrier layer. A p-channel HFET is formed on the second buffer layer.