Multiple bank memory with over-the-array conductors programmable for providing either column factor or y-decoder power connectivity
US5896310A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1997 |
| Grant date | Apr 20, 1999 |
| Priority date | — |
| Expiry date | Dec 24, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory configuration (20) which includes a first and second bank (B0, B1). Both bank arrays comprises a plurality of wordlines (WLs) and bitlines (BLs). The memory configuration further includes a plurality of column decoder circuits (CDEC0-CDEC7), and a plurality of y-select conductors (C0-C15) generally parallel to the plurality of bitlines of the first bank array. Each of the plurality of y-select conductors is operable to be selected by one of the plurality of column decoder circuits in response to a column address. The memory configuration further includes a plurality of column factor conductors (F0.sub.I, F1.sub.I, F2.sub.I) formed in a direct periphery area existing between the first and second bank arrays. Still further, the memory configuration includes a power conductor (PDD.sub.I) formed between the first and second bank arrays, and aligned generally parallel to the plurality of wordlines of the first and second bank arrays. Lastly, the memory configuration includes a plurality of programmable conductors (PC0-PC7) disposed between and generally parallel to the plurality of y-select conductors. The programmable conductors are formed such that a first portion of each of …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.