Patent · US Expired

Process for the production of an epitaxially coated semiconductor wafer

US5897705A · kind A · utility

3Cited by

5References

8Claims

0Family size

Assignee

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG · DE

Inventors

Wolfgang Siebert · Mehring, DE
Erwin Mayer · Burghausen, DE

Key dates

Filing date	Apr 2, 1996
Grant date	Apr 27, 1999
Priority date	—
Expiry date	Apr 2, 2016

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B33/00
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A process for the production of an epitaxially coated semiconductor wafer, composed of a substrate wafer of monocrystalline silicon having a front side and a rear side, has at least one layer of semiconductor material which is epitaxially deposited on the front side of the substrate wafer and which is obtained by production of a heavily doped silicon monocrystal by crucible-free zone pulling, production of a substrate wafer having polished front side from the monocrystal and deposition of at least one epitaxial layer of semiconductor material on the front side of the substrate wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.