Field-emission electron source and method of manufacturing the same
US5897790A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1997 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | Dec 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30426
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.