InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indium
US5898721A · kind A · utility
6Cited by
6References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 14, 1997 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | Feb 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An InGaAsP/AlGaAs/GaAs heterostructure laser diode includes an InGaAsP quantum well and at least a cladding region of AlGaAs while essentially avoiding the deleterious effects attributed to the presence of Al in heterostructure laser diodes. Embodiments with Al present in the cladding region and with Al present in both the waveguide and the cladding regions are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.