Method for enhancing hydrogenation of thin film transistors using a metal capping layer and method for batch hydrogenation
US5899711A · kind A · utility
28Cited by
9References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 11, 1996 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | Oct 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3003
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for enhancing hydrogenation of an oxide-coated polycrystalline silicon thin-film transistor or devices includes depositing a metal capping layer on the device prior to hydrogenation. In addition, a method for batch hydrogenation of substrates or plates carrying the oxide-coated polycrystalline silicon devices includes placing the plates in a downstream flow from a hydrogen plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.