Patent · US Expired

Method for fabricating semiconductor wafers

US5899743A · kind A · utility

23Cited by
4References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 29, 1996
Grant dateMay 4, 1999
Priority date
Expiry dateAug 29, 2016

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/974
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

A method for efficiently fabricating semiconductor wafers of good planarization without utilizing chemical solutions of high etching rate is disclosed. The method slices a single-crystal ingot into slices of wafers. The edge of each wafer is chamfered. A lapping step is carried out to planarize the chamfered wafer. Both side surfaces of the wafer are then polished. Next, the wafer surface is mirror polished. Finally, the wafer is cleaned.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.