Method for stripping photoresist
US5900351A · kind A · utility
12Cited by
11References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1997 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | Jun 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It has been discovered that organic photoresists may be quickly, coveniently, and completely stripped using a hot hydrogen atmosphere. The substrates are preferably exposed to such atmosphere utilizing a hydrogen conveyor furnace. The gases from the furnace are burned to carbon dioxide and water thereby eliminating the need to dispose of a stripping agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.