Field effect semiconductor device having a reduced leakage current
US5900641A · kind A · utility
12Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1997 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | Dec 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
Abstract
A field-effect transistor including a channel layer, a source electrode, a drain electrode, a high-resistance layer provided on the channel layer between the source electrode and the drain electrode and a gate electrode provided in an opening formed in the high-resistance layer, wherein the high-resistance layer is defined by a first side-wall facing the source electrode and a second side-wall facing the drain electrode, such that the first side-wall is separated from the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.