Semiconductor device and method of testing the same
US5900645A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 1997 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | Nov 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is tested without destroying a substrate immediately after a formation of a metal film and before patterning the metal film. To this end, the substrate is first divided into a product region and a test pattern region. Next, an insulating film is formed on the substrate. Thereafter, openings are formed in the insulating film and on the product region and the test pattern region. Subsequently, the metal film is formed in the openings and on the insulating film. Finally, the metal film is patterned to form a wiring pattern. Under these circumstances, a forming state of the metal film in the opening on the test pattern region is actually tested. Specifically, the presence or absence of a void is checked. In accordance with this test result, a forming state of the metal film in the opening in the product region is evaluated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.