Internal boosted voltage generator of semiconductor memory device
US5901055A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1997 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | Aug 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/07
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An internal boosted voltage generator for a semiconductor memory device eliminates excessive increases in boosted voltage and reduces current consumption even though the power supply voltage increases. The internal boosted voltage generator includes a pumping portion for pumping a signal from an output node in response to a control signal, a precharging portion for precharging the output node of the pumping portion, and a controlling portion interposed between the pumping portion and the precharge portion. The controlling portion is a pulse generator that varies the precharge time of the precharging portion by varying the pulse with of an output signal according to the power supply voltage. The output signal of the controlling portion has a relatively narrow pulse width at high power supply voltages and a wider pulse width at low power supply voltages. Therefore, the device is not exposed to excessive stress even though the power supply voltage increases greatly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.