Semiconductor assembly with solder material layer and method for soldering the semiconductor assemly
US5901901A · kind A · utility
19Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1997 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Feb 19, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor assembly with a solder material layer and a method for soldering the semiconductor assembly, a silicon semiconductor body with a diffusion barrier layer is provided with a solder material layer, preferably a tin layer. The semiconductor body is then applied to a metal carrier plate and is directly soldered to the carrier plate by heating to temperatures to above 250.degree. C., i.e. without further additions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.