Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
US5902393A · kind A · utility
24Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 1997 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Jan 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method of growing 4 gallium nitride-based crystal by vapor phase epitaxy, suitable for mass production, without the necessity of thermal processing after completion of the crystal growth. The temperature of the substrate crystal immediately after completion of the crystal growth is 700.degree. C. or higher, and cooling of the substrate crystal at 700.degree. C. or lower after completion of the crystal growth is performed in an atmosphere of a hydrogen-fee carrier gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.