Thin film transistor and method of manufacturing the same
US5903013A · kind A · utility
3Cited by
5References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 18, 1996 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Nov 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6717
Abstract
A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the gate edge portions. An active region is formed on the surface of the insulating film and the exposed substrate. The active region includes an off-set region, a channel region, a source region, and a drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.